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The Bond Orbital Model Study of the Valence Bands of Cubic‐Tetrahedrally Coordinated Semiconductors
Author(s) -
Ciraci S.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220700230
Subject(s) - semiconductor , valence (chemistry) , sophistication , polar , ion , chemistry , metal , cubic crystal system , condensed matter physics , molecular physics , crystallography , physics , quantum mechanics , social science , organic chemistry , sociology
The valence energy bands of cubic‐tetrahedrally coordinated semiconductor sis investigated by employing the bond orbital model. In terms of the basic parameters of the model simple expressions are obtained for the gaps and widths at X and L, which allows to learn origins of a variety of the trends. The main features of the bands are found to depend exclusively on the polarity and the s‐p splittings of the atomic term values of the cation and the anion. As a further sophistication, the second‐neighbor interactions are included. Additional energy parameters representing second‐neighbor interactions are seen to have interesting relations to the polar and the metallic character of these solids. Finally, the pressure dependence of the valence bands is studied.