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Biexcitons in Indirect‐Gap Semiconductors: Applications to GaSe and AgBr
Author(s) -
Quattropani A.,
Forney J. J.,
Bassani F.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220700208
Subject(s) - biexciton , semiconductor , degeneracy (biology) , multiplet , exciton , condensed matter physics , band gap , envelope (radar) , ground state , physics , direct and indirect band gaps , quantum mechanics , telecommunications , bioinformatics , radar , computer science , biology , spectral line
Abstract The effective mass approximation for biexciton states is extended to semiconductors with indirect gap. An equation similar to that valid for direct‐gap semiconductors is obtained for the envelope function. The electron‐hole exchange contribution is formally the same as that for the direct‐gap case. Intervalley interaction lifts the degeneracy of the biexciton ground state. The procedure is applied to the case of GaSe and AgBr, where the ground state multiplet of the biexcitons is related to the band structures.