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Theory of Interband Resonance Raman Scattering in Small‐Gap Semiconductors
Author(s) -
Enderlein R.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220700125
Subject(s) - semiconductor , raman scattering , resonance (particle physics) , band gap , scattering , x ray raman scattering , photon energy , light scattering , condensed matter physics , raman spectroscopy , atomic physics , photon , physics , materials science , optics , optoelectronics
A theoretical analysis is given for the interband resonance Raman scattering in small gap semiconductors. For a certain interval of incident photon energies the scattering spectrum shows a strong resonance peak. By measurements in the visible frequency region, especially the energy gap can be determined from the scattering spectrum. The possibilities of an experimental observation of the predicted effects are discussed for some representative small‐gap semiconductors.