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Nonpolar Scattering of Electrons by Optical Phonons in Small‐Gap Semiconductors
Author(s) -
Bogusławski P.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220700104
Subject(s) - condensed matter physics , semiconductor , phonon , scattering , band gap , homopolar motor , electron , relaxation (psychology) , physics , chemistry , materials science , optics , optoelectronics , quantum mechanics , psychology , social psychology , magnet
Electron transition probabilities and high temperature relaxation time for nonpolar optical‐phonon scattering in small‐gap and symmetry‐induced zero‐gap semiconductors are calculated. The band structures of these materials are described by Kane's three‐level model. Matrix elements are expressed by means of two deformation‐potential constants. The contribution of transverse phonon branches to the nonpolar optical relaxation time is higher than that of the longitudinal branch. Spin‐flip and spin‐conserving processes are of similar importance. The role of the nonpolar mode is comparable to polar optical‐phonon scattering at high electron concentrations in both InSb‐like and HgTe‐like semiconductors, being of particular importance in homopolar α‐Sn. The present theory is applicable to the valence band of III–V compounds, overcoming simplifications used by other authors.