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Free carrier absorption in semiconductors with non‐parabolic and ellipsoidal energy band structures
Author(s) -
Das A. K.,
Nag B. R.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220690203
Subject(s) - semiconductor , attenuation coefficient , scattering , ellipsoid , absorption (acoustics) , impurity , phonon , free carrier absorption , condensed matter physics , electronic band structure , phonon scattering , optics , physics , materials science , computational physics , chemistry , quantum mechanics , astronomy
Formulas are derived for the calculation of free carrier absorption in semiconductors with ellipsoidal constant energy surfaces, including the effects of non‐parabolicity, for all important scattering mechanisms. It is shown that simple expressions for the absorption coefficient follow from a mathematically exact formulation only in case of acoustic, nonpolar optical, and inter‐valley scattering. Simple, approximate expressions are also suggested for the evaluation of the absorption coefficient in the case of polar optical phonon and impurity scattering.