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Tunnel spectroscopy of thin bismuth films
Author(s) -
Lutskii V. N.,
Nikitin N. E.,
Pinsker T. N.,
Volkov V. A.,
Elinson M. I.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220690116
Subject(s) - bismuth , band gap , effective mass (spring–mass system) , spectroscopy , range (aeronautics) , dispersion (optics) , condensed matter physics , materials science , conduction band , electronic band structure , electron , charge carrier , physics , optics , quantum mechanics , composite material , metallurgy
A quantitative study is made of the band structure in Bi by tunnel spectroscopy of size‐quantized films. The positions of quantum energy levels are determined for a wide range of film thickness (700 to 3200 Å). On the basis of the two‐band model the electron energy spectrum in size‐quantized bismuth films is calculated. From the comparison of the experimental results with the theory the energy gap and the effective mass at the extremum of the conduction band in bulk Bi are determined. The dispersion law of charge carriers is defined by these parameters.