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The influence of an electric field on the auger recombination in semiconductors
Author(s) -
Gebranzig U.,
Haug A.,
Rosenthal W.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680236
Subject(s) - electric field , auger effect , auger , recombination , semiconductor , atomic physics , electron , field (mathematics) , condensed matter physics , physics , chemistry , quantum mechanics , mathematics , biochemistry , pure mathematics , gene
Auger recombination in semiconductors is sometimes affected by an electric field. Proceeding from Bloch electrons in such a field the transition probability in this case is calculated. The result shows that electric fields of the order of 10 3 V/cm or 10 5 V/cm enhance the recombination probability in III−V‐compounds remarkably; the first value holds for low temperatures ( T ≈ 10 K), the second one for high temperatures ( T ≈ 300 K).
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