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Effect of piezoelectric potential scattering on the microwave faraday effect in n‐CdS
Author(s) -
Srivastava G. P.,
Mathur P. C.,
Shyam R.,
Kataria N. D.,
Chandra I.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680131
Subject(s) - condensed matter physics , scattering , faraday effect , piezoelectricity , impurity , phonon scattering , semiconductor , conduction band , faraday cage , materials science , physics , phonon , optics , optoelectronics , magnetic field , electron , composite material , quantum mechanics
The theory of free‐carrier Faraday effect in semiconductors previously developed by Donovan and Webster for lattice and impurity scattering is extended to the case of n‐type CdS, taking into account piezoelectric and deformation potential scattering. The high frequency magnetoconductivity tensors are derived considering the detailed structure of the conduction band of CdS. The Faraday rotation measurements in n‐type CdS along the c ‐axis are performed at liquid nitrogen temperature and room temperature at 24 GHz. The experimental results are found to agree well with the theory, for β = p / a = 1.9, where a and p being the deformation potential and piezoelectric scattering coefficients at T = 90 °K, respectively.