Premium
On the theory of interband ε(ω) and External Electric Field Modulated Δε(ω) in Disordered Semiconductors
Author(s) -
Esser B.,
Kleinert P.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680125
Subject(s) - condensed matter physics , semiconductor , electric field , band bending , gaussian , materials science , band gap , electron , randomness , physics , quantum mechanics , optoelectronics , mathematics , statistics
The interband dielectric function ε(ω) and its external field induced change Δε(ω) are calculated in the one‐electron approximation for a semiconductor with fluctuating band edges presented by smooth random Gaussian fields. The influence of different random bending of the valence and conduction band edges onε(ω) and Δε(ω) is investigated. The corresponding plots are presented. A broadening of the line shape Δε(ω) is obtained if the band bending becomes different. This broadening might be obtained in electromodulation experiments of crystals propagated by an internal acoustic noise flux. Application of the model to amorphous semiconductors is discussed.