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Domain structure and transverse conductivity of a many‐valley semiconductor in the multivalued sasaki effect
Author(s) -
Gribnikov Z. S.,
Mitin V. V.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680113
Subject(s) - transverse plane , condensed matter physics , displacement (psychology) , conductivity , electrical resistivity and conductivity , transverse field , domain (mathematical analysis) , semiconductor , field (mathematics) , physics , displacement field , materials science , mathematics , mathematical analysis , optoelectronics , thermodynamics , quantum mechanics , engineering , psychology , structural engineering , finite element method , pure mathematics , ising model , psychotherapist
The transverse conductivity (TC) of a semiconductor is studied in the range of the multivalued Sasaki effect in a heating electrical field. The negative TC due to the Erlbach effect does not arise in this field. The TC depends on the surface conditions of the sample and on the domain structure arising in these fields. The case of a small TC caused by a displacement of a domain wall under the influence of a transverse current is possible together with the case of a large positive differential TC. Such conductivity can be both positive and negative depending on the direction of the wall displacement. The case when the driving field and the transverse current are homogeneoils has been studied.