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Calculation of nonradiative multiphonon capture coefficients and ionization rates for neutral centres according to the static coupling scheme: I. Theory
Author(s) -
Pässler R.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680105
Subject(s) - ionization , coupling (piping) , semiconductor , basis (linear algebra) , atomic physics , charge (physics) , thermal , physics , scheme (mathematics) , distribution (mathematics) , simple (philosophy) , chemistry , computational physics , materials science , quantum mechanics , thermodynamics , mathematics , ion , mathematical analysis , geometry , metallurgy , philosophy , epistemology
Capture coefficients and ionization rates for nonradiative multiphonon transitions of charge carriers at neutral imperfections in semiconductors are calculated within the framework of the static coupling scheme. The temperature averaging connected with the thermal distribution of free carriers over the band states is performed on the basis of a three‐param‐etrical overlap‐factor formula which enables a reduction of the analytical expressions for the quantities in consideration to simple functions of five imperfection parameters.