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Additional long‐ and short‐range potentials for direct excitons in zincblende structure solids: I. General correction formula
Author(s) -
Ekardt W.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680104
Subject(s) - physics , exciton , quantum mechanics , electron , bethe–salpeter equation , field (mathematics) , condensed matter physics , semiconductor , amplitude , dielectric , dispersion relation , mathematical physics , quantum electrodynamics , mathematics , pure mathematics , meson
Starting from the general equation derived for the evaluation of corrections a calculation is made within the ladder approximation and with restriction t o the particle‐hole part of the exciton amplitude, of all correction potentials which arise as a result of the expansion of the effective Bethe‐Salpeter equation (BSE) in terms of three independent translation vectors e.g. K – K ′, K ′ and q up to the order |wavevector|°. This means a,n expansion up to E B / E gap or E B / h ω LO taking into account spatial dispersion, local field corrections, dynamical corrections, exchange interaction etc. The results are evaluated for eleven III–V or II–VI zincblende semiconductors using calculated dielectric constant values and interband oscillator strengths. Comparison with experiment is quite satisfactory.