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Theory of inter‐valence‐band electronic raman scattering in cubic semiconductors without and with an external electric field
Author(s) -
Bechstedt F.,
Enderlein R.,
Peukere K.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220680103
Subject(s) - raman scattering , electric field , semiconductor , raman spectroscopy , condensed matter physics , x ray raman scattering , excitation , valence band , semimetal , scattering , band gap , polarization (electrochemistry) , direct and indirect band gaps , valence (chemistry) , materials science , physics , chemistry , optics , optoelectronics , quantum mechanics
Interband electronic resonance Raman scattering for excitation from the split‐off valence band to the light‐hole and heavy‐hole band and from the light‐hole band to the heavy‐hole band in p‐type semiconductors with diamond or zincblende structure has been studied. The polarization dependence of these electronic Raman transitions is stated. The influence of a strong electric field on the form and magnitude of the scattering cross section is calculated. The Raman spectrum will be depressed in the presence of the strong electric field. All explicit results are given for band parameters of Ge.