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The g ‐factor of the conduction electrons in Bi 2 Se 3
Author(s) -
Köhler H.,
Wöchner E.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220670229
Subject(s) - condensed matter physics , magnetoresistance , magnetic field , electron , electrical resistivity and conductivity , physics , effective mass (spring–mass system) , thermal conduction , cyclotron , quantum mechanics
Abstract The oscillatory part of the magneto‐resistance (Shubnikov‐de Haas effect) was investigated on n‐Bi 2 Se 3 single crystals with carrier concentrations between 5 × 10 17 and 1 × 10 18 cm −3 in the temperature range from 1.6 to 4.2 K in pulsed magnetic fields up to 35 T (350 kG) magnetic induction. Most experiments were performed for the magnetic induction B parallel to the trigonal axis c of the crystals, where the smallest cyclotron mass m c and a parabolic ε(κ) relation is present. No spin‐splitting of the Shubnikov‐de Haas resistivity extrema is observed at high quantum numbers. At low quantum numbers the influence of spin‐splitting causes a shift of the resistivity extrema and an additional maximum, which should not be present for M = gm c /(2 m 0 ) ≪ 1. A calculation of the magnetoresistance in quantizing magnetic fields based on Kubo's theory for a field‐independent carrier concentration enables the determination of the expression M = gm c /(2 m 0 ) = 2 with ±5% uncertainty for B ‖ c . The absolute value of the g ‐factor is evaluated hence as (32 ± 3) for B ‖ c . For arbitrary crystal orientation in the magnetic field M may be assumed to be constant within the error margin, the g ‐factor being consequently smaller for B ⟂ c : g ⟂ = (23 ± 3).