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Resonant tunnelling into a size‐quantised metal film
Author(s) -
Cottey A. A.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220670224
Subject(s) - quantum tunnelling , condensed matter physics , metal , conductance , oxide , brillouin zone , lattice (music) , materials science , relaxation (psychology) , monatomic ion , physics , quantum mechanics , psychology , social psychology , acoustics , metallurgy
The theory of resonant tunneling through a thin oxide layer into a size‐quantised metal film has hitherto been given only by modelling the metal film as a free‐electron well with infinite potential barriers at the surface. It Is shown that the essential feature of the theory, namely the “bunching of commensurate energy levels near the middle of the Brillouin zone”, is retained if allowance is made for the lattice potential, for a finite surface potential, and for relaxation of the surface layers of atoms. There is, however, a uniform displacement of the energy levels, and this has an influence on the phase of the observed oscillations of conductance versus bias.