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Influence of E–E scattering on the phenomenological energy relaxation time in nonpolar semiconductors
Author(s) -
Dienys V.,
Kancleris Ž
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220670130
Subject(s) - relaxation (psychology) , scattering , semiconductor , phenomenological model , condensed matter physics , materials science , mixing (physics) , phonon , atomic physics , electron , energy (signal processing) , physics , optics , nuclear physics , optoelectronics , quantum mechanics , psychology , social psychology
The dependence of the phenomenological energy relaxation time τ ε on carrier concentration in n‐and p‐type Ge and n‐type Si at 77°K was measured. The measurements were carried out in a warm electron region using the harmonic mixing technique. A considerable decrease of τ ε with concentration was observed. It is shown that this effect can be explained by the influence of interelectronic scattering on the energy losses caused by the emission of high energy (optical or intervalley) phonons.