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Shock waves of excess carrier concentration in a doped semiconductor
Author(s) -
Almazov A. B.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220670123
Subject(s) - ambipolar diffusion , generalization , shock wave , electron , shock (circulatory) , doping , diffusion , semiconductor , physics , materials science , condensed matter physics , mechanics , computational physics , thermodynamics , mathematics , mathematical analysis , quantum mechanics , medicine
A generalization is derived and discussed of the usual equations of ambipolar diffusion, which describes the behaviour of the extra electrons and holes. It is shown that a special quasilinear version of the equations can describe the formation and development of shock waves of electron density.
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