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The hall effect and the thermopower of two simple heavily doped semiconductor models
Author(s) -
Fischbeck H. J.
Publication year - 1975
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220670114
Subject(s) - condensed matter physics , seebeck coefficient , semiconductor , conductivity , simple (philosophy) , hall effect , doping , electrical resistivity and conductivity , hall conductivity , point (geometry) , physics , materials science , quantum mechanics , mathematics , geometry , philosophy , epistemology
The single‐site approximation is used in order to study the effect of randomly distributed point scatterers on the most important transport properties of two simple semiconductor models. The one consists of two parabolic and the other of two simple‐cubic tight‐binding bands. Numerical results are given for energy‐dependent (density of states, conductivity, Hall conductivity) and temperature‐dependent quantities (conductivity, Hall mobility, thermopower).