Premium
Impurity Effect on the Metal–Semiconductor Transition of NiS
Author(s) -
Ohtani T.,
Kosuge K.,
Kachi S.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660242
Subject(s) - condensed matter physics , impurity , seebeck coefficient , electrical resistivity and conductivity , semiconductor , materials science , phase diagram , thermal conduction , electron , transition metal , thermoelectric effect , mott transition , hexagonal phase , phase transition , metal , phase (matter) , chemistry , hubbard model , hexagonal crystal system , physics , crystallography , superconductivity , thermodynamics , metallurgy , biochemistry , optoelectronics , organic chemistry , quantum mechanics , composite material , catalysis
Impurity effects on the metal‐semiconductor transition of hexagonal N P have been investigated by magnetic susceptibility, electrical resistivity, and thermoelectric power measurements. The transition temperature T t is raised by addition of Ti, V, and Fe, and lowered by the addition of Co and Cu. Cr ions do not seem to be dissolved in NiS lattice. The sample containing 2.0% Cr shows, however, a negative Seebeck coefficients below T t, which implies electron conduction, in contrast with pure NiS. Conduction electrons in this phase seem to be produced from sulfur vacancies. The transition mechanism is explained by the electronic phase diagram based on the Mott‐Hubbard model.