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Influence of Uniaxial Pressure on Hot‐Electron Conductivity in n‐Si at Low Temperatures
Author(s) -
Asche M.,
Russu E.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660212
Subject(s) - perpendicular , condensed matter physics , conductivity , electron , materials science , current (fluid) , saturation (graph theory) , electrical resistivity and conductivity , hot electron , physics , geometry , thermodynamics , mathematics , quantum mechanics , combinatorics
Abstract Investigations of current‐voltage characteristics of n‐Si along 〈100〉 direction at low temperatures when nde should occur are repeated in detail. In order to verify the inter‐valley carrier transfer as origin of current saturation and accompanying oscillations, the valleys are split energetically by uniaxial pressures parallel and perpendicular to the 〈100〉 direction.