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Luminescence and Excitation Spectra of Exciton Emission in GaAs
Author(s) -
Heim U.,
Hiesinger P.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660208
Subject(s) - exciton , luminescence , excited state , emission spectrum , excitation , atomic physics , spectral line , photoluminescence , valence (chemistry) , atomic electron transition , chemistry , materials science , physics , optoelectronics , condensed matter physics , organic chemistry , quantum mechanics , astronomy
Luminescence, excitation, and photoconductivity spectra of epitaxial n‐ and p‐type GaAs at 1.6 K are measured with high resolution, using very low intensity of excitation. Under this condition, it is found that the (D°, X) bound exciton emission is split into two components, and that further structure is observable between the (D°, X) and the luminescence band, recently attributed to lower branch polariton emission. In particular, two very sharp lines are seen ≈ 0.5 meV above the (D°, X) emission. These lines are observed in all our samples, and their intensities seem to be related to the strength of the (D°, X) line. Analysis of the excitation spectra lead to the identification of three emission lines. These are the n = 2 free exciton transition, the two‐electron transition of the (D°, X) complex with the donor left in the n = 3 excited state, and most probably the n = 2 donor‐to‐valence band transition.