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Band Structure and Reflectivity of GaN
Author(s) -
Bloom S.,
Harbeke G.,
Meier E.,
Ortenburger I. B.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660117
Subject(s) - reflectivity , pseudopotential , hexagonal crystal system , materials science , electronic band structure , optoelectronics , optics , crystal (programming language) , condensed matter physics , crystallography , physics , chemistry , computer science , programming language
The E ⊥ c reflectivity has been measured up to 10 eV for hexagonal, single‐crystal GaN. The band structure and reflectivity have been computed by the empirical pseudopotential method and used to identify the observed spectral peaks.