Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe | Zendy

Soukiassian P. | Zendy; Cazaux J. | Zendy; Perrin J. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe

Author(s) -

Soukiassian P.,

Cazaux J.,

Perrin J.

Publication year - 1974

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220660116

Subject(s) - monocrystalline silicon , range (aeronautics) , atomic physics , dielectric , electron , interpretation (philosophy) , energy (signal processing) , materials science , chemistry , physics , analytical chemistry (journal) , silicon , optoelectronics , nuclear physics , quantum mechanics , computer science , composite material , programming language , chromatography

The energy losses suffered by a 40 keV electron beam through some monocrystalline layered III–VI compounds have been measured. By means of a Kramers Kronig analysis, the complex dielectric constant, in the 3 to 35 eV energy range, is computed for GaS (∥ and ⊥ to c‐axis), GaSe (∥ and ⊥ to c‐axis) and InSe (⊥ to c ‐axis) and the e 2 sum rule is applied. Attempts of interpretation are suggested with a special attention for the outer shell core electron excitations.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research