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Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe
Author(s) -
Soukiassian P.,
Cazaux J.,
Perrin J.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660116
Subject(s) - monocrystalline silicon , range (aeronautics) , atomic physics , dielectric , electron , interpretation (philosophy) , energy (signal processing) , materials science , chemistry , physics , analytical chemistry (journal) , silicon , optoelectronics , nuclear physics , quantum mechanics , computer science , composite material , programming language , chromatography
The energy losses suffered by a 40 keV electron beam through some monocrystalline layered III–VI compounds have been measured. By means of a Kramers Kronig analysis, the complex dielectric constant, in the 3 to 35 eV energy range, is computed for GaS (∥ and ⊥ to c‐axis), GaSe (∥ and ⊥ to c‐axis) and InSe (⊥ to c ‐axis) and the e 2 sum rule is applied. Attempts of interpretation are suggested with a special attention for the outer shell core electron excitations.