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The Quasi‐Molecular Large Unit Cell Model in the Theory of Deep Levels in Imperfect Crystals: Point Defects in Graphitic Boron Nitride
Author(s) -
Dobrotvorskii A. M.,
Evaeestov E. A.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660108
Subject(s) - boron nitride , boron , imperfect , impurity , realization (probability) , materials science , lattice (music) , crystallographic defect , nitrogen , unit (ring theory) , carbon fibers , condensed matter physics , chemical physics , nanotechnology , physics , quantum mechanics , nuclear physics , mathematics , composite material , linguistics , philosophy , statistics , mathematics education , composite number , acoustics
The possibilities of the quasimolecular “large unit cell” approach in the theory of deep energy levels in imperfect solids are discussed and some general principles of its realization are formulated. The success of this approach is illustrated by the application to the defect level problem in graphitic boron nitride (vacancies and impurity carbon atoms at boron and nitrogen lattice sites are considered). The results obtained are compared with available experimental data, and possible defect models are discussed.