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The Kinetics of Recombination Radiation and the Temperature of the Electron–Hole Plasma in Silicon
Author(s) -
Dite A. F.,
Lysenko V. G.,
Timofeev V. B.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220660104
Subject(s) - exciton , plasma , electron hole , atomic physics , recombination , electron temperature , atmospheric temperature range , silicon , electron , spontaneous emission , range (aeronautics) , kinetics , radiation , radiative transfer , electron density , excitation , chemistry , physics , condensed matter physics , materials science , optics , optoelectronics , thermodynamics , quantum mechanics , composite material , laser , biochemistry , gene
The temperature of the excitonic gas as well as the temperature and the carrier density in electron‐hole drops (EHD) under intense optical excitation are determined from the analysis of the spectrum of recombination radiation in silicon. The temperature range within which EHD exist is determined (the critical temperature is T c ≈ 33 °K) and the upper branch of the state diagram, excitonic gas–excitonic condensate, is constructed. The kinetics of the radiative recombination spectrum of EHD and excitons is studied, as well as that of the decay of the electron‐hole plasma at temperatures above T c . The dependence of the boundaries of the radiative recombination spectrum on the carrier density in the plasma is analysed.