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Screening, Instability of the Uniform State, and Charge Carrier Scattering in Heavily Doped Ferromagnetic Semiconductors
Author(s) -
Nagaev E. L.,
Grigin A. P.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220650204
Subject(s) - condensed matter physics , ferromagnetism , magnetization , magnetic semiconductor , electrical resistivity and conductivity , semiconductor , scattering , materials science , metastability , instability , doping , magnetic field , physics , optics , optoelectronics , quantum mechanics , mechanics
A calculation of the static dielectric function ε( q ) and the magnetic response function to an electrostatic perturbation χ( q ) is carried out for heavily doped ferromagnetic semiconductors. Due to the spin polarization of the charge carrier a strong correlation exists between the fluctuations of electron density and magnetization. This leads to diminishing screening length and the appearance of local magnetic moments near impurities, which, in turn, causes a strong magnetic field and temperature dependence of the resistivity. On further temperature increase, the screened potential becomes oscillating, and the screening length increases, going to infinity at a temperature which corresponds to the absolute instability of the uniform state. But still earlier a first order phase transition should occur into a nonuniform state, the nonuniform state being metastable in some temperature range. It may be responsible for the resistivity hysteresis observed in some ferromagnetic semiconductors.