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Generalization of Fick's Law for Non‐Local Complex Diffusion in Semiconductors
Author(s) -
Jacoboni C.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220650103
Subject(s) - diffusion , generalization , semiconductor , fourier transform , anomalous diffusion , effective diffusion coefficient , extension (predicate logic) , mathematics , fick's laws of diffusion , order (exchange) , mathematical analysis , law , statistical physics , physics , thermodynamics , innovation diffusion , quantum mechanics , computer science , political science , knowledge management , economics , programming language , medicine , radiology , finance , magnetic resonance imaging
Electron diffusion in semiconductors is studied at short distances and/or times. An extension of Fick's law with higher derivatives is introduced, and a numerical method determines how many terms are to be kept and the values of the corresponding coefficients. At high applied electric fields the asymmetric diffusion introduces an imaginary part of the Fourier‐transformed diffusion coefficient, that is, even order derivatives in the diffusion equation.