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Non‐Ideal Exciton Gas in Silicon and Its Condensation into Electron‐Hole Plasma Drops
Author(s) -
Vavilov V. S.,
Nolle E. L.,
Fazilov A.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220640238
Subject(s) - exciton , atomic physics , excited state , electron , plasma , radius , electron hole , condensation , biexciton , chemistry , physics , condensed matter physics , quantum mechanics , computer security , computer science , thermodynamics
Experimental data on the kinetics of the recombination via exciton states are presented for pure Si excited by a pulsed electron beam in the temperature region 4.2 to 300°K. The energy spectrum of the exciton gas is discussed as a function of the exciton concentration Δn ex and exciton radius r ex . It is shown that for T ⪅ 77 °K at Δn exz ⪆ 1.5 × 10 −2 r ex −3the exciton gas becomes non‐ideal, and must be regarded in the limiting case, near Δn ex ⪆ r ex −3as an electron‐hole plasma. At T ⪅ 20°K and Δn ex ⪆ 1.5 × 10 −2 r ex −3in the luminescence spectrum a new band appears with a maximum at hv max = 1.088 eV. It corresponds to the exciton condensation into electron‐hole plasma drops. The nature of an other line with a maximum at hv max = 1.081 eV is discussed in connection with the possibility of exciton molecular complex formation.