On the Photoionization of Deep Repulsive Impurity Centres in Semiconductors | Zendy

Yartsev V. M. | Zendy

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On the Photoionization of Deep Repulsive Impurity Centres in Semiconductors

Author(s) -

Yartsev V. M.

Publication year - 1974

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220640144

Subject(s) - photoionization , impurity , coulomb , semiconductor , atomic physics , condensed matter physics , physics , phonon , range (aeronautics) , electron , spectrum (functional analysis) , ionization , quantum mechanics , materials science , ion , composite material

The photoionization spectrum is calculated for impurity centres having a repulsive Coulomb potential a t large distances. The short range potential is well approximated by a delta‐function. Effects of the electron‐phonon coupling are taken into account both to the acoustical and optical modes. Transitions to a higher lying band are considered. The results are in satisfactory agreement with the observed spectral dependence.

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