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Amorphous Antiferromagnetism: The Cluster Approach in Doped Semiconductors
Author(s) -
Marko J. R.,
Quirt J. D.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220640138
Subject(s) - antiferromagnetism , spins , condensed matter physics , paramagnetism , impurity , cluster (spacecraft) , doping , amorphous solid , materials science , spin (aerodynamics) , spin glass , physics , crystallography , chemistry , thermodynamics , quantum mechanics , computer science , programming language
A simple method is outlined for the calculation of the paramagnetic spin susceptibility χ s appropriate t o a random spatial distribution of antiferromagnetically coupled spins. This method considers the microscopic sample to be a collection of decoupled clusters each containing three spins. It is specifically applied t o the n‐type silicon system with donor impurity concentrations in the range 10 17 donors,/cm 3 ≦ N D , ≦ 4 × 10 18 donors/cm 3 . The resulting theoretical susceptibilities were of the Curie‐Weiss form for temperatures T > 5 K, but exhibited steepening of the x s −1 vs. T curves a t low temperatures and high concentrations. Both of these features have been observed in amorphous antiferromagnetic systems.