z-logo
Premium
Amorphous Antiferromagnetism: The Cluster Approach in Doped Semiconductors
Author(s) -
Marko J. R.,
Quirt J. D.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220640138
Subject(s) - antiferromagnetism , spins , condensed matter physics , paramagnetism , impurity , cluster (spacecraft) , doping , amorphous solid , materials science , spin (aerodynamics) , spin glass , physics , crystallography , chemistry , thermodynamics , quantum mechanics , computer science , programming language
A simple method is outlined for the calculation of the paramagnetic spin susceptibility χ s appropriate t o a random spatial distribution of antiferromagnetically coupled spins. This method considers the microscopic sample to be a collection of decoupled clusters each containing three spins. It is specifically applied t o the n‐type silicon system with donor impurity concentrations in the range 10 17 donors,/cm 3 ≦ N D , ≦ 4 × 10 18 donors/cm 3 . The resulting theoretical susceptibilities were of the Curie‐Weiss form for temperatures T > 5 K, but exhibited steepening of the x s −1 vs. T curves a t low temperatures and high concentrations. Both of these features have been observed in amorphous antiferromagnetic systems.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here