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The Hole Mobility in a‐Edge‐Dislocated Tellurium Crystals
Author(s) -
Doukhan J. C.,
Drope R.,
Farvacque J. L.,
Gerlach E.,
Geosse P.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220640128
Subject(s) - tellurium , condensed matter physics , substructure , scattering , dislocation , anisotropy , materials science , dipole , deformation (meteorology) , electrical resistivity and conductivity , hall effect , conductivity , enhanced data rates for gsm evolution , electron mobility , optics , physics , composite material , metallurgy , telecommunications , structural engineering , quantum mechanics , computer science , engineering
The conductivity and the Hall effect are measured in the temperature range 4 to 300 K on pure tellurium crystals before and after a homogeneous plastic deformation. No remarkable change was found of the carrier concentration by the deformation. However, a strong anisotropic contribution to the hole scattering is induced by the dislocations. A theoretical treatment is given to explain this scattering mechanism by considering dislocations as charged lines. To explain the observed anisotropy which leads to the lowest mobility for the current parallel to the glide direction, it is assumed, that the dislocations are charged like a linear dipole and, furthermore, are arranged in a substructure.