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Temperature Dependence of the Absorption Edge in Crystalline and Vitreous As 2 S 3
Author(s) -
Zakis J. R.,
Fritzsche H.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220640116
Subject(s) - absorption edge , absorption (acoustics) , enhanced data rates for gsm evolution , materials science , helium , analytical chemistry (journal) , atomic physics , chemistry , band gap , physics , optoelectronics , telecommunications , chromatography , computer science , composite material
Optical absorption below and near the interband absorption edge has been measured from helium temperatures up to the molten state of As 2 S 3 Irreversible changes in absorption below the band edge suggest that heating above 530 K produces defect states in crystalline As 2 S 3 . The exponential absorption tail and thus the absorption edge is temperature independent t o about 200K. Between 300 and 400K it decreases a t a rate of about 1.6 × 10 −3 , eV/K. This temperature dependence is predominantly caused by electron‐phonon interaction.
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