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A Model of the Electrical Transport Phenomena in Imperfect Crystals of Copper Phthalocyanine. III. The Position of the Fermi Level in the Δ‐Model
Author(s) -
Lehmann G.,
Hamann C.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220630134
Subject(s) - fermi level , condensed matter physics , crystal (programming language) , materials science , position (finance) , fermi surface , thermal conduction , copper phthalocyanine , physics , optoelectronics , electron , quantum mechanics , superconductivity , finance , computer science , economics , composite material , programming language
The position of the Fermi level is investigated in crystals and in thin films of copper phthalocyanine. Particularly the ideal crystal, the crystal with a discrete trap level, the crystal with a continuous trap distribution on the surface, and crystals and thin films with a combination of a discrete trap level in the bulk and with a continuous trap distribution on the surface were investigated. The position of the Fermi level has a great influence on the conductivity, on the existence of p‐type or n‐type conduction, and on the population of traps. Based on the ideas of the Δ‐model [1, 2] for each case considered the position of the Fermi level is given in dependence on the temperature and on the injection of additional charge carriers by the contacts.