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Landau Levels in Uniaxially Stressed p‐Type Germanium
Author(s) -
Jones J. C.,
Wallace P. R.,
Ulmet J. P.,
Carrère G.,
Askenazy S.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220630120
Subject(s) - germanium , condensed matter physics , landau quantization , valence band , hamiltonian (control theory) , shubnikov–de haas effect , valence (chemistry) , physics , materials science , magnetic field , band gap , quantum mechanics , mathematics , optoelectronics , quantum oscillations , silicon , mathematical optimization , superconductivity , fermi surface
An effective mass stress Hamiltonian for the Γ 8 ( j = 3/2) valence bands in germanium has been used to calculate the Landau levels in p‐germanium. The magnetic fields and the stress have both been taken in the [100] direction. The stress induced changes in the band structure are related to experimentally observed shifts in the de Haas‐Shubnikov longitudinal magneto‐resistance oscillations.