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Electron–Phonon Interaction in the Photoluminescence of CdTe
Author(s) -
Gippius A. A.,
Panossian J. R.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220620233
Subject(s) - phonon , photoluminescence , coupling (piping) , cadmium telluride photovoltaics , luminescence , intensity (physics) , electron , atomic physics , condensed matter physics , ionization , physics , materials science , optics , quantum mechanics , optoelectronics , ion , metallurgy
The intensity of electron‐phonon coupling in the optical transition (characterized by the value of parameter N in the formula of relative intensity of phonon replicas, I n = I o N n /n!; n = 0, 1, 2, …) was studied as a function of the ionization energy E 1 of the luminescence centres in CdTe. It was found that N = 76 (eV −2 ) E i 2 . This dependence is in agreement with the results of the theory assuming bound carrier coupling with LO‐phonons for deformation potential coupling.