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Shape of the Cyclotron Resonance Absorption Line of Polar Semiconductors: n‐InSb at 337 μm
Author(s) -
Palmetshofer L.,
Kranzer D.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220620219
Subject(s) - line (geometry) , cyclotron resonance , cyclotron , absorption (acoustics) , polar , resonance (particle physics) , atomic physics , semiconductor , range (aeronautics) , beam (structure) , chemistry , physics , optics , materials science , plasma , mathematics , quantum mechanics , geometry , composite material
The shape of the cyclotron resonance absorption line of n‐InSb samples is investigated. Experiments were carried out using a HCN laser beam. The temperature range considered being 77 to 150 K. According to the preparation of the sample surface different shapes of the absorption line are observed. Additionally a theory is worked out which is based on an exact numerical solution of the time‐dependent Boltzmann equation. The theoretical results are compared with the experiment.