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Effects of Doping on the Condensed Electron–Hole State in Germanium and Silicon
Author(s) -
Martin R. W.,
Sauer R.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220620213
Subject(s) - germanium , doping , electron , silicon , impurity , excitation , atomic physics , materials science , electron hole , condensed matter physics , radiative transfer , molecular physics , chemistry , physics , optoelectronics , optics , nuclear physics , organic chemistry , quantum mechanics
Radiative recombination in electron‐hole drops has been investigated for doping levels up to ≈10 18 cm −3 in Ge and Si. It was found that the energy of the condensed state and the density of electrons and holes become dependent on excitation and on impurity concentration above 10 16 cm −3 . Characteristic differences of the lineshapes for the case of Ge and Si are discussed.