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Electron Paramagnetic Resonance (EPR) of Phosphorus in Silicon‐Rich Silicon–Germanium Alloys
Author(s) -
Vollmer H.,
Geist D.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220620205
Subject(s) - electron paramagnetic resonance , silicon , hyperfine structure , phosphorus , germanium , materials science , atom (system on chip) , spectral line , range (aeronautics) , line (geometry) , atomic physics , analytical chemistry (journal) , chemistry , nuclear magnetic resonance , metallurgy , physics , geometry , mathematics , astronomy , computer science , composite material , embedded system , chromatography
g ‐values, hyperfine splittings, and line widths of the EPR‐spectra of phosphorus substituted into Si 1− x Ge x alloys were investigated at 9.3 GHz and 1.8 K in the range 1 ≧ (1 — x ) ≧ 0.84 with phosphorus concentrations between 5 × 10 15 and 10 19 cm −3 . The peculiar variation of the measured quantities with the silicon concentration is discussed with regard to band structure investigations and to the individual surroundings of each phosphorus atom.