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Bound Electron States in the Strain Field of a 60° Dislocation in Germanium
Author(s) -
Claesson A.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220610225
Subject(s) - germanium , electron , dislocation , condensed matter physics , semiconductor , bound state , strain (injury) , crystal (programming language) , materials science , field (mathematics) , physics , silicon , quantum mechanics , optoelectronics , medicine , computer science , programming language , mathematics , pure mathematics
Dislocations in a crystal have a great influence on the states of electrons and phonons. As to electrons the effect of the dislocations is especially noticeable in semiconductors where the number of charge carriers normally is very small. The aim of the present paper is to find the potentials which describe the interaction between electrons and the strain field of a 60° dislocation in germanium. These potentials give rise to bound states with localized electrons.