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A Model for the Deposition of Amorphous Ge
Author(s) -
Shevchik N. J.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220610224
Subject(s) - amorphous solid , deposition (geology) , monolayer , distortion (music) , materials science , crystallography , germanium , chemical physics , nanotechnology , chemistry , optoelectronics , geology , silicon , paleontology , amplifier , cmos , sediment
It is proposed that the continuous random network structure of amorphous Ge depends upon the types of configurations of atoms which are stable at the surface of the film during the time it takes to form a monolayer. As the temperature is raised and/or the deposition rate decreased, the average bond angle distortion decreases and the number of higher membered rings increases at the expense of lowered membered rings. It is argued that these changes may, in part, account for the observed variations in the electronic properties of amorphous Ge.