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Electric‐Field‐Modulated Reflectance on Tellurium
Author(s) -
Herwig R.,
Stuke J.,
Weiser G.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220610217
Subject(s) - tellurium , brillouin zone , selenium , band gap , chemistry , valence band , condensed matter physics , chalcogen , materials science , crystallography , inorganic chemistry , physics , organic chemistry
The electroreflectance spectrum of tellurium single crystals (MOS structure) has been studied in the energy range between 0.3 and 3.2 eV and compared with the spectrum of selenium. Three transitions are observed below 0.5 eV which correspond to the threefold split valence band at point H of the Brillouin zone. The sequence of these energy bands is the same as in selenium and also the temperature shift of the gap shows a similar behaviour for both materials. At higher energies ( ℏ ω > 1 eV), the spectrum of tellurium is much more complicated than that of selenium and a correlation to bandstructure calculations is only partially possible. The dependence of the electroreflectance response on a dc bias points to the existence of slow surface states at the interface tellurium–tellurium dioxide.