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Galvano‐ and Thermomagnetic Phenomena in n‐InSb‐Type Semiconductors at Inelastic Optical Scattering
Author(s) -
Tolpygo H. I.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220610128
Subject(s) - condensed matter physics , scattering , thermomagnetic convection , boltzmann equation , inelastic scattering , electron , physics , magnetic field , chemistry , optics , quantum mechanics
Following a previous work [1] the temperature and field dependence of the transport coefficients are calculated for non‐degenerated n‐InSb taking intoaccount Kane's dispersion law, inelastic optical scattering, and the temperature dependence of the band structure parameters. Preliminary calculations based upon the relaxation time approximation confirmed the conclusion [1] about the dominant role of the optical and impurity scattering (including that of electrons by holes) in a broad temperature interval (50 to 400 °K). The Boltzmann equation for this scattering mechanisms using the method developed in [2] is solved. The electron distribution functions were found for the cases of the electric and magnetic fields and the thermal flow being present. Theoretical results for the mobilities and the Nernst‐Ettingshausen (NE) coefficients are compared with the experiment. This comparison shows that the theory overestimates somewhat the role of the optical scattering. Both the absolute values and the temperature dependence of the NE coefficients turn out to be only in a rough correspondence with the observed ones. The possible reasons of discrepancies are discussed.