Premium
Anomalous Temperature Dependence of Charge Carrier Density and Mott Transition in Ferromagnetic Semiconductors
Author(s) -
Grigin A. P.,
Nagaev E. L.
Publication year - 1974
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220610103
Subject(s) - condensed matter physics , ferromagnetism , degenerate energy levels , allowance (engineering) , semiconductor , charge carrier density , magnetic semiconductor , electron , charge carrier , magnetic moment , materials science , exchange interaction , physics , doping , quantum mechanics , mechanical engineering , optoelectronics , engineering
The temperature dependence of the conductivity of ferromagnetic semiconductors is theoretically investigated for both the non‐degenerate and degenerate case with allowance of the exchange interaction between moveable electrons and localized magnetic moments. For the former the temperaturedependence of the charge carrier density is found.