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The Effect of Phonon Heating on the Propagation of Strong High‐Frequency Electromagnetic Waves in Semiconductors
Author(s) -
Gasymov T. M.,
Katanov A. A.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600244
Subject(s) - phonon , condensed matter physics , physics , electromagnetic radiation , electron , amplitude , semiconductor , wavelength , degenerate energy levels , cyclotron resonance , cyclotron , optics , optoelectronics , quantum mechanics
The propagation of a strong high‐frequency electromagnetic wave has been considered in non‐degenerate semiconductors in the case of electron heating and interaction with long‐wavelength (LW) phonons. Especially a case has been considered where there is no “thermal reservoir” (bath) of short‐wavelength (SW) phonons in the lattice and hence the energy obtained by the LW phonons from the electrons is transferred across the crystal boundaries to the medium surrounding the specimen. It is shown that the heating of phonons leads to an essentially non‐linear problem. Expressions of the field damping and of the temperature damping for electrons ( T e ) and phonons ( T f ) have been established in the weak damping region, and it is shown that the penetration depth is strongly dependent on the amplitude of the incident electromagnetic wave, E 0 . In the intense damping region (near cyclotron resonance), the surface impedance of the semiconductor has been calculated, which grows with the amplitude of the incident electromagnetic wave.