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GaAs Luminescence Transitions to Acceptors in Magnetic Fields
Author(s) -
Willmann F.,
Dreybrodt W.,
Bettini M.,
Bauser E.,
Bimberg D.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600231
Subject(s) - acceptor , luminescence , impurity , conduction band , doping , coulomb , condensed matter physics , magnetic field , materials science , shallow donor , atomic physics , chemistry , physics , optoelectronics , electron , organic chemistry , quantum mechanics
Low temperature luminescence spectra of pure and Sn‐doped epitaxial GaAs are reported. Distant donor‐acceptor pair transitions and conduction band to acceptor transitions are investigated in magnetic fields up to 12 T. The shifts of donor‐acceptor emission lines in unintentionally doped samples are in quantitative agreement with the calculated variation of the donor binding energy and of the Coulomb term. A considerable change in the magnetic behaviour at donor concentrations n > 5 × 10 15 cm −3 is qualitatively discussed in terms of screening effects by free carriers on the impurity potential and impurity band formation. The shift of conduction band to acceptor transitions is linear up to the highest field.