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External Multi‐Photon Photoeffect from Impure Semiconductors and Dielectrics
Author(s) -
Freydkin E. S.,
Kovarskii V. A.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600216
Subject(s) - photocurrent , photoelectric effect , photon , semiconductor , recombination , electron , physics , dielectric , kinetic energy , phonon , atomic physics , condensed matter physics , photoconductivity , optoelectronics , chemistry , optics , quantum mechanics , biochemistry , gene
The external multi‐photon photoeffect of impure crystals is analysed by the method of kinetic equations. The role isshown that is played by localized states of the electron mteracting with phonons in forming the energetic distribution of the escaped photoelectrons. An explanation is given of the experiments carried out by Logothetis and Hartman [4]. The recombination effect on the external photocurrent is considered.