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Isoelectronic Impurity States in Tellurium
Author(s) -
Takita K.,
Suzuki K.,
Tanaka S.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600206
Subject(s) - tellurium , impurity , doping , condensed matter physics , valence band , hall effect , electrical resistivity and conductivity , chemistry , atmospheric temperature range , semimetal , valence (chemistry) , materials science , analytical chemistry (journal) , band gap , inorganic chemistry , physics , thermodynamics , organic chemistry , chromatography , quantum mechanics
The galvanomagnetic properties of Se‐doped tellurium measured in the temperature range from 1.2 to 77 K were compared with those of undoped tellurium. The hole concentrations were not changed by the Se‐doping (from several p.p.m. t o 1500 p.p.m. (0.15%)). The temperature dependence of the weak field Hall coefficient was greatly changed by doping and showed two peaks at 4 to 6 and 20 to 25 K in sufficiently Se‐doped samples. The temperature dependence of the resistivity was also changed and showed a broad peak around 15 K. These results were interpreted on the base of a two‐carrier model in which the impurity band‐like states are degenerate with the valence band as was proposed previously and the number of the states increases with the Se‐concentration. This means that the impurity band‐like states of undoped tellurium may also consist of isoelectronic impurity states due to the residual Se‐impurity. The nature of the short range potential of the Se‐impurity in tellurium is discussed.