Premium
The phonon drag in wurtzite‐type semiconductors
Author(s) -
Bulat L. P.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600148
Subject(s) - wurtzite crystal structure , phonon , condensed matter physics , phonon drag , piezoelectricity , relaxation (psychology) , semiconductor , scattering , anisotropy , phonon scattering , physics , materials science , seebeck coefficient , thermoelectric effect , quantum mechanics , diffraction , acoustics , psychology , social psychology
The formula for the phonon drag part of the thermoelectric power tensor α ii phin wurtzite structure semiconductors has been received. The comparison between theory and experiment as well as the analysis of various possible mechanisms of phonon relaxation enable to conclude that the phonon drag effect is associated with the piezoelectric interaction between electrons and acoustic phonons, with the phonon relaxation stemming from the phonon‐phonon scattering. Calculation of Kα = α 33 ph /α 11 phfor a number of compounds has been performed, where the piezoelectric potential and the dielectric and phonon spectrum anisotropy are taken into account.