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Density of states and conductivity in highly impure semiconductors
Author(s) -
Lukes T.,
Rogers B. A.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600142
Subject(s) - density of states , boltzmann constant , condensed matter physics , position and momentum space , momentum (technical analysis) , semiconductor , boltzmann equation , physics , fermi gamma ray space telescope , conductivity , electrical resistivity and conductivity , fermi level , statistical physics , quantum mechanics , electron , finance , economics
The evaluation of the density of states of a semiconductor disordered by a high density of impurities is considered by path integral methods. An effective momentum approximation and a cumulant approximation in momentum space are both used and graphical results for the density of states are presented. The results are applied to the evaluation of the static electrical mobility. It is found that this can be described by a Boltzmann like and non‐Boltzmann like term and graphical results for the variation with Fermi energy of both these terms are given.