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Resonance raman scattering in group Vb semimetals: As, Sb, and Bi
Author(s) -
Renucci J. B.,
Richter W.,
Cardona M.,
SchÖstherr E.
Publication year - 1973
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220600133
Subject(s) - brillouin zone , raman spectroscopy , raman scattering , dielectric , resonance (particle physics) , phonon , x ray raman scattering , cross section (physics) , scattering , atomic physics , condensed matter physics , chemistry , molecular physics , materials science , physics , optics , quantum mechanics , optoelectronics
The dependence of the Raman scattering cross section of As, Sb, and Bi on the energy of the exciting laser was measured in the region from 1.6 to 2.7 eV. The shape of the resonance curve agrees reasonably well with the squared magnitude of the derivative of the dielectric constant with respect to frequency. Discrepancies are only seen at low frequencies for Sb and As. They are attributed to variations of the electron‐phonon interaction through the Brillouin zone. From these measurements, relative values of several average electron–phonon interaction constants are derived.